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EPC2001 Development Board EPC9013
EPC2001 Development Board EPC9017
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EPC2001 Development Board EPC9013

EPC9013 Development Board using the EPC2001 100V Enhancement Mode (eGaN®) Field Effect Transistor (FET)


The EPC9013 development board features the 100 V EPC2001 enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation process of the EPC2001 eGaN FET for high current operation by including all the critical components on a single board that can be easily connected into any existing converter.

Product Description

The EPC9013 development board is 2" x 2" and features eight EPC2001 eGaN FETs using the Texas Instruments LM5113 gate driver. The development board configuration is recommended for high current applications. The board contains all critical components and the printed circuit board (PCB) layout is designed for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and evaluate eGaN FET efficiency.

  • Embedded:No
  • Function:Half H-Bridge Driver (External FET)
  • Primary Attributes:100V, 35A Max Output GaNFET Capability
  • Secondary Attributes:GaNFET Driver Circuit Uses 7V ~ 12V
  • Supplied Contents:Board(s)
  • Type:Power Management
  • Utilized IC / Part:EPC2001C

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EPC9013EPC9013BOARD DEV FOR EPC2001 100V EGAN Power ManagementHalf H-Bridge Driver (External FET)NoEPC2001CRoHS

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Associated Product
EPC GaNFET (Gallium Nitride)
Category: Semiconductors, Development Tools-Discrete Semiconductors-Transistors, FETs, IGBTs-FETs Single-N-Channel-GaNFET (Gallium Nitride)