Results: 1 - 2 of 2
Selected Category: Semiconductors, Development Tools > Discrete Semiconductors > Transistors, FETs, IGBTs > RF FETs > HEMT, HFET, LDMOS
Subtitle: 25 W, C-band, Unmatched, GaN HEMT
Description: These are a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes them ideal for C-band pulsed or CW saturated amplifiers. The transistor is available in both screw-down, flange and solder-d...