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C3M0120090D N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3
Price & Procurement
2 231 In Stock
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Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 6.43000 $6.43
100 6.18000 $618.00
500 6.02500 $3 012.50

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C3M0120090D

Datasheet
Digi-Key Part Number C3M0120090D-ND
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Manufacturer

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Manufacturer Part Number C3M0120090D
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Description 900V, 120 MOHM, G3 SIC MOSFET
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Manufacturer Standard Lead Time 16 Weeks
Detailed Description

N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3

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Documents & Media
Datasheets C3M0120090D
Article Library Use SiC-Based MOSFETs to Improve Power Conversion Efficiency
Product Attributes
Type Description Select All
Categories
Manufacturer Cree/Wolfspeed
Series C3M™
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 17,3nC @ 15V
Vgs (Max) +18V, -8V
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 600V
FET Feature -
Power Dissipation (Max) 97W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
 
Environmental & Export Classifications
RoHS Status RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
For Use With

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Additional Resources
Standard Package 30