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IPP200N25N3GXKSA1 N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO220-3
Price & Procurement
 

Quantity
All prices are in USD.
Price Break Unit Price Extended Price
1 6.46000 $6.46
10 5.83800 $58.38
100 4.83360 $483.36
500 4.20902 $2 104.51
1 000 3.66593 $3 665.93

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number IPP200N25N3GXKSA1-ND
Copy   IPP200N25N3GXKSA1-ND
Quantity Available 991
Can ship immediately
Manufacturer

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Manufacturer Part Number

IPP200N25N3GXKSA1

Copy   IPP200N25N3GXKSA1
Description MOSFET N-CH 250V 64A TO220-3
Copy   MOSFET N-CH 250V 64A TO220-3
Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO220-3

Copy   N-Channel 250V 64A (Tc) 300W (Tc) Through Hole PG-TO220-3
Documents & Media
Datasheets IPx200N25N3 G
Other Related Documents Part Number Guide
Featured Product Data Processing Systems
Simulation Models OptiMOS™ Power MOSFET 250V N-Channel Spice Model
Product Attributes Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7100pF @ 100V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequently Bought Together
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Additional Resources
Standard Package ? 500
Other Names IPP200N25N3 G
IPP200N25N3 G-ND
IPP200N25N3G
SP000677894

07:34:16 9.17.2019