EPC

EPC2367 100 V Enhancement-Mode eGaN® Power Transistor

The EPC EPC2367 100 V, 101 A enhancement-mode eGaN power transistor supports high current operation with efficient heat dissipation

Image of EPC EPC2367 100 V Enhancement-Mode eGaN® Power TransistorThe EPC EPC2367 100 V enhancement-mode eGaN power transistor is optimized for ultra-high efficiency and power density in high-frequency switching applications. With ultra-low on-resistance, zero reverse recovery, and a compact chip-scale package, EPC2367 enables smaller, faster, and more efficient power designs compared to silicon MOSFETs.

Features
  • High voltage GaN power transistor: 100 V enhancement-mode eGaN FET supporting high-frequency operation and fast transient response
  • Ultra-low RDS(on): 1.2 mΩ typical at VGS = 5 V, minimizing conduction losses
  • Zero reverse recovery: Eliminates reverse-recovery losses for higher efficiency
  • Ultra-low gate charge: Enables fast switching and reduced switching losses
  • Compact chip-scale package: 3.3 mm × 3.3 mm footprint for space-constrained, high-density designs
  • Excellent thermal performance: Supports high current operation with efficient heat dissipation
Applications
  • High-frequency DC/DC converters
  • High power density DC/DC modules
  • Motor drives
  • Synchronous rectification

EPC2367 100 V Enhancement-Mode eGaN® Power Transistor

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
New Product
TRANS GAN 100V DIE,1.5 MOHM, 5PI		EPC2367TRANS GAN 100V DIE,1.5 MOHM, 5PI18894 - Immediate$5.90View Details
Published: 2026-01-19

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