Name: IMTA65R050M2HXTMA1
Brand: Infineon Technologies
SKU: 448-IMTA65R050M2HXTMA1TR-ND
Price: 7.7004 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IMTA65R050M2HXTMA1
DigiKey Part Number	448-IMTA65R050M2HXTMA1TR-ND - Tape & Reel (TR) 448-IMTA65R050M2HXTMA1CT-ND - Cut Tape (CT) 448-IMTA65R050M2HXTMA1DKR-ND - Digi-Reel®
Manufacturer	Infineon Technologies
Manufacturer Product Number	IMTA65R050M2HXTMA1
Description	SILICON CARBIDE MOSFET
Manufacturer Standard Lead Time	61 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 43A (Tc) 197W (Tc)
Datasheet	Datasheet
EDA/CAD Models	IMTA65R050M2HXTMA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer	Infineon Technologies
Series	CoolSiC™
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V, 20V
Rds On (Max) @ Id, Vgs	46mOhm @ 18.2A, 20V
Vgs(th) (Max) @ Id	5.6V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 18 V
Vgs (Max)	+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	197W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	-
Supplier Device Package	-
Package / Case	-