650 V and 1,200 V TRENCHSTOP™ IGBT7 H7

Infineon's TRENCHSTOP technology addresses the rising demand for green and efficient energy applications

Image of Infineon's 650 V and 1200 V TRENCHSTOP™ IGBT7 H7Infineon's advanced TRENCHSTOP IGBT7 H7 technology addresses the rising demand for green and efficient energy applications. Using the latest micro-pattern trench design, it delivers exceptional control and performance. This leads to substantial loss reduction, heightened efficiency, and increased power density in applications. It is utilized across diverse industries including string inverters, energy storage systems (ESS), EV charging, as well as traditional sectors like Industrial UPS and welding.

The portfolio includes variants ranging from 40 A to 150 A, offered in five different package types: standard TO-247-3 , TO-247-3 HCC, TO-247-4, TO-247-3 Plus, and TO-247-4 Plus. The TO-247-3 HCC variant of the TRENCHSTOP IGBT 7 H7 features high creepage clearance, further enhancing its suitability for various applications. For enhanced performance, consider the IKZA and IKY 4-pin packages, which not only reduce switching losses but also provide additional benefits such as lower voltage overshoot, minimized conduction losses, and the lowest reverse recovery loss. With these advancements, the TRENCHSTOP IGBT 7 H7 simplifies designs and minimizes the need for device paralleling.

Features
  • High power density with up to 150 A rating
  • Fast switching behavior with low EMI emissions
  • High creepage clearance
  • No SCSOA capability
  • Optimized diode for target applications, very soft and low QRR (specific devices)
  • TJ (max): +175°C
  • Five package choices
Applications
  • String inverters
  • Energy storage systems (ESS)
  • EV charging
  • Industrial UPS
  • Industrial heating and welding
Published: 2024-06-07