QSiC™ Series 1200 V Gen3 SiC MOSFETs

The SemiQ QSiC third-generation silicon carbide (SiC) 1200 V MOSFET is engineered for high-voltage applications demanding greater efficiency, compact size, and thermal performance. Roughly 20% smaller than the previous generation, it reduces switching losses and supports operation beyond 1400 V. Ideal for EV charging stations, solar inverters, renewable energy systems, industrial power supplies, motor drives, and induction heating, this device helps shrink system footprints while improving power density and reliability.

Available in bare die, SOT-227, TSPak, and TO-247-4L packages, the Gen3 SiC MOSFET gives engineers flexibility across a range of power designs. With proven SiC performance and rugged construction, it supports efficient, next-gen power electronics in both industrial and renewable sectors.