Renesas Electronics Corporation

SLG59H1016 NMOS Power Switch

Renesas presents high-performance, self-powered, 13.1 mΩ NMOS integrated power switch

Image of Renesas SLG59H1016 NMOS Power Switch (click for full-size)The Renesas SLG59H1016V is a high-performance, self-powered, 13.1 mΩ NMOS integrated power switch (IPS) designed for 4.5 V to 22 V power rails up to 3.5 A. This high-voltage and high-current IPS provides system-level protection features, such as inrush current control, undervoltage/overvoltage detection, two-level current-limit protection, and fault reporting features. The HFET product includes an analog current monitor output feature.

This feature alone offers substantial system BOM cost and PCB savings by eliminating the need for an external current shunt resistor, a difference or level-shifting amplifier, and associated passive components to measure FET current. The SLG59H1016V is fully specified over the -40°C to +125°C extended industrial temperature range. All HFET IPSs implement a unique power-limit protection scheme to protect the internal FET against any abuse on startup or during nominal operation. The SLG59H1016V package exhibits a low thermal resistance for high-current operation while coming in a space-efficient 4.8 mm² footprint.

Features
  • Wide operating supply voltage: 4.5 V to 22 V
  • Maximum continuous switch current: 3.5 A
  • Automatic nFET SOA protection
  • High-performance MOSFET switch
    • Low RDS(ON): 13.1 mΩ at VIN = 22 V Low ∆RDS(ON)/∆VIN: <0.05 mΩ/V Low ∆RDS(ON)/∆T: <0.06 mΩ/°C
  • 4-level, pin-programmable VIN overvoltage lockout
  • Capacitor-programmable inrush current control
  • Two stage current limit protection:
    • Resistor-programmable active current limit
    • Internal short-circuit current limit
  • Open drain FAULT signaling
  • MOSFET current analog output monitor: 10 μA/A
  • Fast 4 kΩ output discharge
  • Pb-free / halogen-free / RoHS compliant packaging
Published: 2017-08-22