IPP530N15N3GXKSA1 Infineon Technologies | Discrete Semiconductor Products

IPP530N15N3GXKSA1
cms-digikey-product-number	IPP530N15N3GXKSA1-ND
cms-manufacturer	Infineon Technologies
cms-manufacturer-product-number	IPP530N15N3GXKSA1
cms-description	MOSFET N-CH 150V 21A TO220-3
cms-customer-reference
cms-detailed-description	N-Channel 150 V 21A (Tc) 68W (Tc) Through Hole PG-TO220-3-1
cms-datasheet	cms-datasheet
cms-eda-cad-models	IPP530N15N3GXKSA1 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	887 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
Base Product Number	IPP530