Name: GCMS007C120S1-E1
Brand: SemiQ
SKU: 1560-GCMS007C120S1-E1-ND
Price: 44.0572 EUR
Availability: OutOfStock

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GCMS007C120S1-E1
DigiKey Part Number	1560-GCMS007C120S1-E1-ND
Manufacturer	SemiQ
Manufacturer Product Number	GCMS007C120S1-E1
Description	GEN3 1200V 7M SIC MOSFET & SBD
Manufacturer Standard Lead Time	6 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 189A (Tc) 536W (Tc) Chassis Mount SOT-227
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	SemiQ
Series	QSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	189A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	11mOhm @ 100A, 18V
Vgs(th) (Max) @ Id	4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs	505 nC @ 18 V
Vgs (Max)	+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds	13094 pF @ 1000 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	536W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC