Name: TK32E12N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK32E12N1S1X-ND
Price: 2.5048 EUR
Availability: InStock

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TK32E12N1,S1X
DigiKey Part Number	TK32E12N1S1X-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK32E12N1,S1X
Description	MOSFET N CH 120V 60A TO-220
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 120 V 60A (Tc) 98W (Tc) Through Hole TO-220
Datasheet	Datasheet
EDA/CAD Models	TK32E12N1,S1X Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	34 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 60 V
FET Feature	-
Power Dissipation (Max)	98W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	TK32E12

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Tube