Name: TPN4R712MD,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPN4R712MDL1QTR-ND
Price: 1.3144 EUR
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TPN4R712MD,L1Q
DigiKey Part Number	TPN4R712MDL1QTR-ND - Tape & Reel (TR) TPN4R712MDL1QCT-ND - Cut Tape (CT) TPN4R712MDL1QDKR-ND - Digi-Reel®
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TPN4R712MD,L1Q
Description	MOSFET P-CH 20V 36A 8TSON
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	P-Channel 20 V 36A (Tc) 42W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Datasheet	Datasheet
EDA/CAD Models	TPN4R712MD,L1Q Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVI
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4300 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	42W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	TPN4R712