Name: SIDR5802EP-T1-RE3
Brand: Vishay Siliconix
SKU: 742-SIDR5802EP-T1-RE3TR-ND
Price: 2.8768 EUR
Availability: InStock

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SIDR5802EP-T1-RE3
cms-digikey-product-number	742-SIDR5802EP-T1-RE3TR-ND - Tape & Reel (TR) 742-SIDR5802EP-T1-RE3CT-ND - Cut Tape (CT) 742-SIDR5802EP-T1-RE3DKR-ND - Digi-Reel®
cms-manufacturer	Vishay Siliconix
cms-manufacturer-product-number	SIDR5802EP-T1-RE3
cms-description	N-CHANNEL 80 V (D-S) 175C MOSFET
cms-standard-lead-time	28 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 80 V 34.2A (Ta), 153A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC
cms-datasheet	cms-datasheet
cms-eda-cad-models	SIDR5802EP-T1-RE3 Models

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen V
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	34.2A (Ta), 153A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	7.5W (Ta), 150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8
Base Product Number	SIDR5802

Unit Price without VAT:	2,32000 €
Unit Price with VAT:	2,87680 €

SIDR5802EP-T1-RE3