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Bipolar (BJT) Transistor NPN 60 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BC637

DigiKey Part Number
BC637OS-ND
Manufacturer
Manufacturer Product Number
BC637
Description
TRANS NPN 60V 1A TO92
Customer Reference
Detailed Description
Bipolar (BJT) Transistor NPN 60 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)
Datasheet
 Datasheet
EDA/CAD Models
BC637 Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Bulk
Part Status
Obsolete
Transistor Type
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA, 2V
Power - Max
625 mW
Frequency - Transition
200MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92 (TO-226)
Base Product Number
Product Questions and Answers

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Obsolete
This product is no longer manufactured. View Substitutes or Alternative Package Types
Non-Cancelable/Non-Returnable