Name: RQ3E110AJTB
Brand: Rohm Semiconductor
SKU: RQ3E110AJTBTR-ND
Price: 1.2276 EUR
Availability: InStock

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RQ3E110AJTB
cms-digikey-product-number	RQ3E110AJTBTR-ND - Tape & Reel (TR) RQ3E110AJTBCT-ND - Cut Tape (CT) RQ3E110AJTBDKR-ND - Digi-Reel®
cms-manufacturer	Rohm Semiconductor
cms-manufacturer-product-number	RQ3E110AJTB
cms-description	MOSFET N-CH 30V 11A/24A 8HSMT
cms-standard-lead-time	21 Weeks
cms-customer-reference
cms-detailed-description	N-Channel 30 V 11A (Ta), 24A (Tc) 2W (Ta) Surface Mount 8-HSMT (3.2x3)
Datasheet	Datasheet
cms-eda-cad-models	RQ3E110AJTB Models

cms-product-attributes

cms-type	cms-description	cms-select-all
cms-category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	11A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	11.7mOhm @ 11A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN
Base Product Number	RQ3E110